p age:p2-p1 plastic-encapsulate transistors features e pitaxial planar die construction. ideal for medium power amplification and switching. maximum ratings (ta=25 unless otherwise noted) p arameter symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current -continuous i c -600 ma collector power dissipation p c 350 mw thermal resistance junction to ambient r ja 360 ! / w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =- 10a i e =0 -60 v collector-emitter breakdown voltage v ceo i c =-10ma i b =0 -40 v emitter-base breakdown voltage v ebo i e =- 10a i c =0 -5 v collector cut-off current i cbo v cb =-50v i e =0 -0.02 a collector cut-off current i cex v ce =-30v v be(off) =-0.5v -0.05 a dc current gain h fe v ce =-10v i c =-150ma v ce =-10v i c =-0.1ma v ce =-10v i c =-1ma v ce =-10v i c =-10ma v ce =-10v i c =-500ma 100 35 50 75 30 300 collector-emitter saturation voltage v ce(sat) i c =-150ma i b =-15ma i c =-500ma i b =-50ma -0.4 -1.6 v base-emitter saturation voltage v be(sat) i c =-150ma i b =-15ma i c =-500ma i b =-50ma -1.3 -2.6 v output capacitance c ob v cb =10v,f=1.0mhz 8.0 pf input capacitance c ib v eb =10v,f=1.0mhz 30 pf transition frequency f t v ce =-20v i c =-50ma f=100mhz 200 mhz (pnp) 1. base 2. emitter sot-23 3. collecto mmbt2907 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors turn-on time t on v ce =-30v,i c =-150ma, i b1 =-15ma 45 ns delay time t d 10 ns rise time tr 40 ns turn-off time toff vce=-6v,ic=-150ma ib1=ib2=-15ma 100 ns storage time ts 80 ns fall time tf 30 ns typical characteristics mmbt2907 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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